Dr. Yu Zhang
yuzhang@sdu.edu.cn
Prof. Yu Zhang obtained joint Ph.D in Electrical Engineering at Yale University and Shandong University. His research focus on novel materials and devices for biosensor and optoelectronics, such as 2D materials and devices, GaN materials and devices, microfluidics. Prof. Yu Zhang developed a novel approach to create porous GaN for advanced materials and devices. Now Prof. Yu Zhang has published more than 30 research papers in English such as Applied Physics Letters, Nanotechnology, Scientific Reports，Advanced materials, etc. and applied more than 30 inventions with more than 10 granted in China and US.
Ph.D., Yale University/ Shandong University joint training (2010)
Associate Research Scientist/Postdoctoral Fellow, Yale University (2011-2013)
Vice General Manager ENRAYTEK/Jiata Semi （2013-2016）
Associate Research Scientist Shandong University (2017-)
Research Interests:
Microfluidics chip for biosensor，Novel materials and devices for sensing
Selected Publications:
1. 2014 Structural Dynamics of GaN Microcrystals in Evolutionary Selection Selective Area Growth probed by X-ray Microdiffraction，Scientific Report, V. Kachkanov，B. Leung, J. Song, Y. Zhang,M.-C. Tsai, G. Yuan, J. Han，K.P. O'Donnell，
2. 2014 Growth, structural and optical properties of ternary InGaN nanorods prepared by selective-area metalorganic chemical vapor deposition, Nanotechnology J.Song, B. Leung, Y.Zhang and J. Han,
3. 2013 Evolutionary Selection Growth： TowardsTemplate-Insensitive Preparation of Single-Crystal Layers, Advanced Materials B.Lueng, J. Song, Y. Zhang, J.Han,
4. 2013 Study of the mechanical properties of nanoporous GaN and its application to epitaxial liftoff, ACS Appl Mater Interfaces S.J Huang, Y. Zhang, B. Leung, G. Wang, H. Jiang,Y.M. Fan,Q. Sun, J.F. Wang, K. Xu, J.Han,
5. 2012a liftoff process of GaN layers and devices through nanoporous transformation, Appl. Phys.Lett. Y. Zhang, B. Leung, and J. Han;Semiconductor today news: Nanoporous GaN for vertical LED lift-off http://www.semiconductor-today.com/news_items/2012/MAY/YALE_150512.html
6. 2012AWafer-Level Integrated White-Light-Emitting Diode Incorporating Colloidal Quantum Dots as a Nanocomposite Luminescent Material, Advanced Materials C. Dang, J. Lee, Y. Zhang, J. Han,C.Breen, J.S.Steckel, S.C.Sullivan, and A. Nurmikko,
7. 2011 Fabrication of large area, free standing GaN by a novel nanoetching process, Nanotechnology Y. Zhang, Q. Sun, B. Leung, John Simon, Minjun Larry Lee and J. Han;nanotechweb news: Nanoscale etch releases free-standing GaN over large area http://nanotechweb.org/cws/article/lab/44798
8. 2011 Shape transformation of nanoporous GaN by annealing: From buried cavities to
nanomembranes, Appl. Phys. Lett. C.Yerino, Y.Zhang, B.Leung, M.L.Lee, T-C Hsu,C-K Wang,W-C Peng, J.Han,
9. 2011 Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors, Appl. Phys. Lett. Y.J.Lv, Z.J.Lin, Y. Zhang, L.G.Meng, C.B. Luan, Z.F. Cao,H. Chen,Z.G. Wang,
10. 2010 A conductivity-based selective etching for next generation GaN devices, Physica Status Solidi (b) Y.Zhang,S.-W.Ryu,C.D.Yerino,B.Leung,Q.Sun,Q.Song,H.Cao,and J.Han;
