海洋测控研究团队
研究人员
张宇
发布时间:2019年07月16日 10:20    作者:    点击:[]

张宇 博士

Dr. Yu Zhang

yuzhang@sdu.edu.cn


耶鲁大学/山东大学 联合培养博士 (2010)

耶鲁大学 博士后/副研究员 (2011-2013)

映瑞光电/镓特半导体 副总经理  (2013-2016)

山东大学 副研究员 (2017-)

Ph.D., Yale University/ Shandong University joint training (2010)

Associate Research Scientist/Postdoctoral Fellow, Yale University (2011-2013)

Vice General Manager ENRAYTEK/Jiata Semi (2013-2016)

Associate Research Scientist Shandong University (2017-)



研究方向:

微流控芯片及其装备,新型传感材料与器件及其装备

Research Interests:

Microfluidics chip for biosensor,Novel materials and devices for sensing


Selected Publications:

1. 2014 Structural Dynamics of GaN Microcrystals in Evolutionary Selection Selective Area Growth probed by X-ray Microdiffraction,Scientific Report, V. Kachkanov,B. Leung, J. Song, Y. Zhang,M.-C. Tsai, G. Yuan, J. Han,K.P. O'Donnell,

2. 2014 Growth, structural and optical properties of ternary InGaN nanorods prepared  by selective-area metalorganic chemical vapor deposition, Nanotechnology J.Song, B. Leung, Y.Zhang and J. Han,

3. 2013 Evolutionary Selection Growth: TowardsTemplate-Insensitive Preparation of Single-Crystal Layers, Advanced Materials B.Lueng, J. Song, Y. Zhang, J.Han,

4. 2013 Study of the mechanical properties of nanoporous GaN and its application to   epitaxial liftoff, ACS Appl Mater Interfaces S.J Huang, Y. Zhang, B. Leung, G. Wang, H. Jiang,Y.M. Fan,Q. Sun, J.F. Wang, K. Xu, J.Han,

5. 2012a liftoff process of GaN layers and devices through nanoporous transformation, Appl. Phys.Lett. Y. Zhang, B. Leung, and J. Han;Semiconductor today news: Nanoporous GaN for vertical LED lift-off http://www.semiconductor-today.com/news_items/2012/MAY/YALE_150512.html

6. 2012AWafer-Level Integrated White-Light-Emitting Diode Incorporating Colloidal Quantum Dots as a Nanocomposite Luminescent Material, Advanced Materials C. Dang, J. Lee, Y. Zhang, J. Han,C.Breen, J.S.Steckel, S.C.Sullivan, and A. Nurmikko,

7. 2011 Fabrication of large area, free standing GaN by a novel nanoetching process,  Nanotechnology Y. Zhang, Q. Sun, B. Leung, John Simon, Minjun Larry Lee and J. Han;nanotechweb news: Nanoscale etch releases free-standing GaN over large area     http://nanotechweb.org/cws/article/lab/44798

8. 2011 Shape transformation of nanoporous GaN by annealing: From buried cavities to

nanomembranes, Appl. Phys. Lett. C.Yerino, Y.Zhang, B.Leung, M.L.Lee, T-C Hsu,C-K Wang,W-C Peng, J.Han,

9. 2011 Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors, Appl. Phys. Lett. Y.J.Lv, Z.J.Lin, Y. Zhang, L.G.Meng, C.B. Luan, Z.F. Cao,H. Chen,Z.G. Wang,

10. 2010 A conductivity-based selective etching for next generation GaN devices, Physica Status Solidi (b) Y.Zhang,S.-W.Ryu,C.D.Yerino,B.Leung,Q.Sun,Q.Song,H.Cao,and J.Han;



个人简介:

张宇,男,生于1978年12月,山东大学/耶鲁大学联合培养博士,副研究员,硕士研究生导师。
长期从事先进材料、器件和装备(如:新型二维材料和器件,GaN材料和器件,微流控芯片及其装备)的研发和产业化工作,主持和参与国、省、市科研和产业化基金10余项,包含国家重点研发计划项目,自然基金项目,产业化项目,校企合作项目等。发(现)明了氮化镓多孔结构材料制备方法;带领团队成功把大功率垂直结构LED和高端氮化镓衬底推向产业化。发表了论文30余篇,包括Applied Physics Letters, Nanotechnology, Scientific Reports,Advanced materials等。学术成果在International Conference on Nitride Semiconductors(ICNS), International Workshop on Nitride Semiconductors (IWN), Electronic Materials Conference (EMC)等国际会议上口头报告或张贴报告20余次,得到业内的认可和好评。申请国际和中国发明专利30余项,,已授权10余项,其中一项国际专利授权给国际知名公司进行产业化。

Prof. Yu Zhang obtained joint Ph.D in Electrical Engineering at Yale University and Shandong University. His research focus on novel materials and devices for biosensor and optoelectronics, such as 2D materials and devices, GaN materials and devices, microfluidics. Prof. Yu Zhang developed a novel approach to create porous GaN for advanced materials and devices. Now Prof. Yu Zhang has published more than 30 research papers in English such as Applied Physics Letters, Nanotechnology, Scientific Reports,Advanced materials, etc. and applied more than 30 inventions with more than 10 granted in China and US.


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